Traditional microwave radio systems based on GaAs are migrating to SiGe to take advantage of higher yield, higher integration and lower cost. SiGe HBTs have shown noise and power-consumption characteristics comparable or superior to those of GaAs at a much lower cost. SiGe can be manufactured in wafer sizes as large as 200 mm to maximize production efficiency.
Apart from the cost aspect, the option to have highly integrated circuits, including CMOS logic, is an important aspect of the SiGe-BiCMOS technology. DSP and control functions can be easily co-integrated with the RF front-end allowing the modem to gain full control of the radio. Many scenarios of operation can be supported without the need of external DACs and microprocessors.
Market reports reveal a continuously increasing demand of high quality Microwave radios to support high throughput fixed wireless services. With almost the entire frequency spectrum available, from sub-6GHz up to 90GHz bands, the number of radio configurations is a real challenge for the radio providers. Silicon integration (Si RFIC) is a one way road, to put in order all the radio products, increase the yield, minimize the cost and lower the logistics.
ELXYS has the design flow and the skills to integrate your discrete component radio into a single SiGe or CMOS chip. For further information on how to start integrating your radio, please contact us today at
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